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2011-09-19 1 bc857...-bc860... pnp silicon af transistor ? for af input stages and driver applications ? high current gain ? low collector-emitter saturation voltage ? low noise between 30 hz and 15 khz ? complementary types: bc847...-bc850... (npn) ? pb-free (rohs compliant) package ? qualified according aec q101 1) 1 bc857bl3 is not qualified according aec q101 type marking pin configuration package bc857a bc857b bc857bl3* bc857bw bc857c bc857cw bc858a bc858b bc858bw bc858c bc858cw bc859c bc860b bc860bw bc860cw 3es 3fs 3f 3fs 3gs 3gs 3js 3ks 3ks 3ls 3ls 4cs 4fs 4fs 4gs 1=b 1=b 1=b 1=b 1=b 1=b 1=b 1=b 1=b 1=b 1=b 1=b 1=b 1=b 1=b 2=e 2=e 2=e 2=e 2=e 2=e 2=e 2=e 2=e 2=e 2=e 2=e 2=e 2=e 2=e 3=c 3=c 3=c 3=c 3=c 3=c 3=c 3=c 3=c 3=c 3=c 3=c 3=c 3=c 3=c - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - sot23 sot23 tslp-3-1 sot323 sot23 sot323 sot23 sot23 sot323 sot23 sot323 sot23 sot23 sot323 sot323 * not qualified according aec q101
2011-09-19 2 bc857...-bc860... maximum ratings parameter symbol value unit collector-emitter voltage bc857..., bc860... bc858..., bc859... v ceo 45 30 v collector-base voltage bc857..., bc860... bc858..., bc859... v cbo 50 30 emitter-base voltage v ebo 5 collector current i c 100 ma peak collector current, t p 10 ms i cm 200 total power dissipation t s 71 c, bc857-bc860 t s 135 c, bc857bl3 t s 124 c, bc857w-bc860w p tot 330 250 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) bc857-bc860 bc857bl3 bc857w-bc860w r thjs 240 60 105 k/w 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation)
2011-09-19 3 bc857...-bc860... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bc857..., bc860... i c = 10 ma, i b = 0 , bc858..., bc859... v (br)ceo 45 30 - - - - v collector-base breakdown voltage i c = 10 a, i e = 0 , bc857..., bc860... i c = 10 a, i e = 0 , bc858..., bc859... v (br)cbo 50 30 - - - - emitter-base breakdown voltage i e = 1 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 45 v, i e = 0 v cb = 30 v, i e = 0 , t a = 150 c i cbo - - - - 0.015 5 a dc current gain 1) i c = 10 a, v ce = 5 v, h fe -grp.a i c = 10 a, v ce = 5 v, h fe -grp.b i c = 10 a, v ce = 5 v, h fe -grp.c i c = 2 ma, v ce = 5 v, h fe -grp.a i c = 2 ma, v ce = 5 v, h fe -grp.b i c = 2 ma, v ce = 5 v, h fe -grp.c h fe - - - 125 220 420 140 250 480 180 290 520 - - - 250 475 800 - collector-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v cesat - - 75 250 300 650 mv base emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 850 - - base-emitter voltage 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 600 - 650 - 750 820 1 pulse test: t < 300s; d < 2%
2011-09-19 4 bc857...-bc860... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz f t - 250 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 1.5 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 8 - short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.a i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.b i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.c h 11e - - - 2.7 4.5 8.7 - - - k ? open-circuit reverse voltage transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.a i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.b i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.c h 12e - - - 1.5 2 3 - - - 10 -4 short-circuit forward current transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.a i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.b i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.c h 21e - - - 200 330 600 - - - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.a i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.b i c = 2 ma, v ce = 5 v, f = 1 khz , h fe -grp.c h 22e - - - 18 30 60 - - - s noise figure i c = 0.2 ma, v ce = 5 v, f = 1 khz, ? f = 200 hz, r s = 2 k ? , bc859, bc850 f - 1 4 db equivalent noise voltage i c = 200 ma, v ce = 5 v, r s = 2 k ? , f = 10...50 hz, bc860 v n - - 0.11 v
2011-09-19 5 bc857...-bc860... dc current gain h fe = ? ( i c ) v ce = 1 v 10 10 10 10 ehp00382 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 20 10 0 ehp00380 v cesat 10 ma 10 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c c base-emitter saturation voltage i c = ? ( v besat ), h fe = 20 0 10 ehp00379 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c collector cutoff current i cbo = ? ( t a ) v cbo = 30 v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c
2011-09-19 6 bc857...-bc860... transition frequency f t = ? ( i c ) v ce = 5 v 10 10 10 10 ehp00378 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb 0 1 2 3 4 5 6 7 8 9 10 pf 12 c cb ( c eb ) ccb ceb total power dissipation p tot = ? ( t s ) bc856-bc860 0 15 30 45 60 75 90 105 120 c 150 t s 0 30 60 90 120 150 180 210 240 270 300 mw 360 p tot total power dissipation p tot = ? ( t s ) bc857bl3 0 15 30 45 60 75 90 105 120 c 150 t s 0 25 50 75 100 125 150 175 200 225 250 mw 300 p tot
2011-09-19 7 bc857...-bc860... total power dissipation p tot = ? ( t s ) bc857w-bc860w 0 15 30 45 60 75 90 105 120 c 150 t s 0 25 50 75 100 125 150 175 200 225 250 mw 300 p tot permissible pulse load p totmax / p totdc = ? ( t p ) bc857/w-bc860/w 10 ehp00377 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t permissible puls load r thjs = ? ( t p ) bc857bl3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) bc857bl3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2011-09-19 8 bc857...-bc860... package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2011-09-19 9 bc857...-bc860... package sot323 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 0.1 0.9 12 3 a 0.2 2 -0.05 0.65 0.65 m 3x 0.1 0.1 min. 0.1 m 0.2 a 0.2 4 2.15 1.1 8 2.3 pin 1 pin 1 2005, june date code (ym) bcr108w type code 0.6 0.8 1.6 0.65 0.65 manufacturer
2011-09-19 10 bc857...-bc860... package tslp-3-1 2 3 1 0.4 +0.1 bfr193l3 type code pin 1 marking laser marking 0.76 4 1.16 0.5 pin 1 marking 8 reel ?180 mm = 15.000 pieces/reel for board assembly information please refer to infineon website "packages" package outline foot print marking layout (example) standard packing stencil apertures copper solder mask 0.275 0.2 0.315 0.945 0.45 0.17 0.355 0.2 0.35 0.225 1 0.6 0.225 0.15 0.35 0.3 r0.1 1 2 0.05 0.35 0.035 2 x 0.15 1) top view bottom view 1) dimension applies to plated terminal 0.035 0.5 1) 0.05 0.6 3 0.05 0.65 0.035 2x 0.25 1) 0.035 0.25 1) 1 0.05 pin 1 marking 0.05 max.
2011-09-19 11 bc857...-bc860... edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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